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The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the… Click to show full abstract
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Еt located 0.95 eV below the conduction band bottom.
Keywords:
magnetron sputtering;
properties gallium;
oxide films;
obtained magnetron;
films obtained;
gallium oxide
Journal Title: Russian Physics Journal
Year Published: 2018
Link to full text (if available)
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Journal Title: Russian Physics Journal
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!