The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 –Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows… Click to show full abstract
The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 –Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) ηnηc2.$$ {\eta}_n{\eta}_c^2. $$
               
Click one of the above tabs to view related content.