A model of the p–n junction that adequately describes the non-quasi-static effects of accumulation and relaxation of nonequilibrium charge carriers is considered. In this case, the diffusion charge equation is… Click to show full abstract
A model of the p–n junction that adequately describes the non-quasi-static effects of accumulation and relaxation of nonequilibrium charge carriers is considered. In this case, the diffusion charge equation is written in a closed form resolved with respect to the diffusion charge. This allowed computer programming of this model to be performed without user-defined recursion resolving the differential equation with respect to the diffusion charge. As a result, the non-quasi-static model of the p–n junction has been realized as an equivalent circuit containing only conventional quasi-static elements of computer-aided design systems.
               
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