LAUSR

The paper explores the electrical conductivity, thermoelectric coefficient and thermal conductivity of SnTe crystals with the hyperstoichiometric tin content up to 1.0 at.% in the 90–300 K temperature range. Identified are the electron and lattice components of thermal conductivity and thermal resistance created by the structural vacancies. It is shown that the temperature dependencies of the electrical conductivity and thermoelectric coefficient are explained well by the model of two valence bands, whereas that of thermal conductivity are determined by the phonon-phonon scattering. Extrinsic stacking faults in the amount of 0.05 at.% Sn, create donor centers in the SnTe crystal, thereby decreasing its electrical and thermal conductivities. When the concentration of the extrinsic stacking faults is higher than 0.05 at.% Sn, they occupy the vacancies and enhance these parameters.