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High-Temperature Thermoelectric Properties of Perovskite-Type Pr0.9Sr0.1Mn1−xFexO3 (0 ≤ x ≤ 1)

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Polycrystalline samples of Pr0.9Sr0.1Mn1−xFexO3 (0 ≤ x ≤ 1) have been synthesized using a conventional solid-state reaction method, and the crystal structure studied at room temperature. The magnetic susceptibility was measured from 5 K to… Click to show full abstract

Polycrystalline samples of Pr0.9Sr0.1Mn1−xFexO3 (0 ≤ x ≤ 1) have been synthesized using a conventional solid-state reaction method, and the crystal structure studied at room temperature. The magnetic susceptibility was measured from 5 K to 350 K. The electrical resistivity, Seebeck coefficient, and thermal conductivity were investigated as functions of temperature below 850 K. For all samples, the perovskite structure at room temperature exhibited orthorhombic Pbnm phase. While the Pr0.9Sr0.1MnO3 (x = 0) sample exhibited ferromagnetic-like ground state below TC = 145 K (Curie temperature), the ferromagnetic transition temperature TC decreased with increasing x. The Seebeck coefficient of the samples with 0 ≤ x ≤ 0.8 decreased with increasing temperature because of double-exchange interaction of Mn ions. In fact, the carrier type for x = 0 changed from hole-like to electron-like behavior above 800 K. On the other hand, the samples with x ≥ 0.9 showed large positive Seebeck coefficient over the entire temperature range, indicating that the low-spin state of Fe ions dominated the electronic structure for this x range. In particular, the sample with x = 1 exhibited p-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical resistivity, and low thermal conductivity. Thus, the sample with x = 1 showed power factor of 20 μW m−1 K−2 at 850 K leading to ZT of 0.024 at this temperature, indicating that hole-doped perovskite-type iron oxide is a good candidate high-temperature thermoelectric p-type oxide.

Keywords: thermoelectric properties; pr0 9sr0; temperature; 1mn1 xfexo3; seebeck coefficient; 9sr0 1mn1

Journal Title: Journal of Electronic Materials
Year Published: 2017

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