LAUSR

Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/n-Si organic–inorganic (OI) heterojunction-type devices were fabricated, and the current–voltage (I–V) characteristics of the devices have been investigated at room temperature. I–V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I–V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I–V plots. Thus, the modification of the Au/n-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I–V measurements were repeated to characterize the devices at 100 mW/cm2 illumination intensity with the help of a solar simulator with an AM1.5G filter.