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The interface between multi-walled carbon nanotubes and semiconductor material has important application in electronic and optoelectronic devices. This paper reports the Schottky diode characteristic of multi-walled carbon nanotube/zinc oxide (MWCNT/ZnO)… Click to show full abstract
The interface between multi-walled carbon nanotubes and semiconductor material has important application in electronic and optoelectronic devices. This paper reports the Schottky diode characteristic of multi-walled carbon nanotube/zinc oxide (MWCNT/ZnO) interface. The ideality factor of the MWCNT/ZnO Schottky diode is 2.24 and the Schottky barrier height is 0.534 eV. A dramatic change in non-linear behaviour of the Schottky barrier interface is observed after annealing. The measured current–voltage characteristic shows rectifying behavior of ZnO-MWCNTs interface with an on-to-off ratio of 100.
Journal Title: Journal of Electronic Materials
Year Published: 2018
Link to full text (if available)
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