LAUSR

Studies of structural and electrical properties of Bi2SmTiVO9, a member of the Aurivillius family, synthesized by a mixed oxide reaction method are discussed here. The compound crystallizes in the orthorhombic crystal system. Detailed analysis of surface morphology (using field emission surface electron microscopy and an energy dispersive x-ray analysis profile) has confirmed the formation of high quality samples (i.e., homogeneous distribution of densely populated grains and elements present in required quantity/ratio). Analysis of impedance and modulus data provide the mechanism of dielectric relaxation and transport properties in the sample. The experimental values of the real component of dielectric constant between 250 and 420 and loss tangent between 0.03 and 0.7 of the studied material (Bi2SmTiVO9), obtained in the frequency range of 300 kHz–1 MHz and temperature range of 300–500°C, suggest its applications for high frequency-high temperature devices. The analyses of AC conductivity of the system obeys the universal Jonscher’s power law, and the conduction mechanism of the Correlated Barrier Hopping model type. The existence of a hysteresis loop at room temperature supports the ferroelectric nature in the material.