LAUSR

Here we report an investigation on ZnO and metal phthalocyanine (MePc) based heterostructures for inorganic/organic hybrid p–n junction diodes using temperature dependent current–voltage (J–V) and capacitance–voltage (C–V) characteristics. The J–V characteristics of the ZnO/MePc’s based hybrid p–n junction diode are asymmetrical with a rectification ratio of 104 indicating the formation of a depletion layer, which has also been corroborated by C–V characteristics. The mechanism of device operation has been revealed by the temperature dependence of the ideality factor and saturation current–density. These results indicate that operation of a hybrid p–n junction diode can be described by tunneling enhanced bulk recombination.