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Optimized Dielectric Properties Achieved in Polymer Based Nanocomposites Bearing Wide Bandgap Semiconductors by Tuning Interface Interaction

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Interfacial Coulomb force has a significant influence on permittivity of 0–3 polymer composites bearing Si based semi-conducting fillers. Polarity of the polymer, particle size of the Si based filler and… Click to show full abstract

Interfacial Coulomb force has a significant influence on permittivity of 0–3 polymer composites bearing Si based semi-conducting fillers. Polarity of the polymer, particle size of the Si based filler and bandgap of the Si based filler were closely connected to the interfacial Coulomb force. In this work, two 0–3 polymer composite systems with different wide bandgap nitrogen based semi-conducting nano-fillers were prepared and their electrical properties were tested. A higher permittivity from stronger interface interaction would be realized if the nitrogen based filler possessed a narrower band-gap. This work might offer a facile route to achieve high-performance composite dielectrics by promoting the interfacial Coulomb force.

Keywords: bandgap; interfacial coulomb; interface interaction; wide bandgap

Journal Title: Journal of Electronic Materials
Year Published: 2019

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