LAUSR

Abstractn-Type polycrystalline SnSe0.95-x%MoCl5 (x = 0.5, 1.0, 1.5, 2) samples have been synthesized by melting and hot-pressing. The effect of MoCl5 doping on thermoelectric properties is investigated. The multipoint defects of Clse and Mosn increased the carrier concentration from 5.3 × 1017 cm−3 (p-type) in undoped SnSe to 1.76 × 1019 cm−3 (n-type) in SnSe0.95-1.5%MoCl5 sample, which leads to increased electrical conductivity. Moreover, the multipoint defects enhanced the phonon scattering and resulted in a suppression of the thermal conductivity. As a result, a peak value ZT of 0.66 was obtained at 773 K for SnSe0.95-1%MoCl5. These results show that MoCl5 could be an effective dopant for improving the thermoelectric performance of n-type SnSe.