LAUSR

The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 × 102 cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 105 over 7.5 × 102 endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.