LAUSR

Al/InGaAs, Al/Ti/InGaAs, and Al/Ni/InGaAs contacts were prepared by conducting rapid thermal annealing at different temperatures, and the interfacial reaction was characterized using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The specific contact resistivity of the metal film contacts on n -InGaAs was determined using a circular transmission line measurement. The Al/Ni/InGaAs, Al/Ti/InGaAs, and Al/InGaAs stack contacts remained stable even after the samples were subjected to annealing at 400°C. When the annealing temperature increased to 600°C, Al began melting and clustering due to the formation of Al(Ga) to form Al/InGaAs. An AlNi phase was formed at the interfaces of an Al/Ni/InGaAs contact when it was annealed above 400°C, thus causing the specific resistance and roughness to increase dramatically. Each element of the Al/Ti/InGaAs contact began diffusing when it was annealed beyond 400°C, and an Al 3 Ti phase was formed above 500°C. The formation of Al 3 Ti led to the increase in the specific resistance and roughness. Moreover, the as-deposited Al/Ni/InGaAs, Al/Ti/InGaAs and Al/InGaAs samples had specific resistances of 1.11 × 10 −5  Ω cm 2 , 5.11 × 10 −5  Ω cm 2 , and 1.14 × 10 −4  Ω cm 2 , respectively. These results reveal that to develop the Al/Ti/InGaAs and Al/Ni/InGaAs stacks on InGaAs with a low parasitic resistance, the processing temperature should be lower than 400°C.