LAUSR

The $$\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}/\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}$$Sr0.88Bi0.12TiO3/SrTi0.92Mg0.08O3 (SBTO/STMO) heterostructure films were prepared on $$\hbox {p}^{+}\hbox {-Si}$$p+-Si substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/$$\hbox {p}^{+}\hbox {-Si}$$p+-Si exhibited a bipolar, remarkable resistance-switching characteristic, and $$R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\,\,{\sim }10^{4}$$RHRS/RLRS∼104. More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach $$10^{2 }$$102 at $$\pm 1\hbox { V}$$±1V. The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).