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Abstract$$\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}$$GaAs1-x-yNxBiy is a suitable candidate for $$1.06\,{\upmu }\hbox {m}$$1.06μm solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study… Click to show full abstract
Abstract$$\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}$$GaAs1-x-yNxBiy is a suitable candidate for $$1.06\,{\upmu }\hbox {m}$$1.06μm solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy $$\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}$$GaAs1-x-yNxBiy with $$x/y=0.58$$x/y=0.58 can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of $$\sim $$∼200 meV for $$\hbox {GaAs}_{0.937}\hbox {N}_{0.023}\hbox {Bi}_{0.04}$$GaAs0.937N0.023Bi0.04 alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of $$\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}$$GaAs1-x-yNxBiy quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.