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Structural evolution and $$\hbox {CO}_{2}$$CO2 capture performance of silicon oxycarbide-derived carbon by thermal-treatment under an Ar atmosphere

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AbstractIn this paper, we investigated the effect of thermal-treatment under an Ar atmosphere on the structural evolution of silicon oxycarbide-derived carbons (SiOC-DCs) by adjusting the temperature from 1200 to $$2100^{\circ… Click to show full abstract

AbstractIn this paper, we investigated the effect of thermal-treatment under an Ar atmosphere on the structural evolution of silicon oxycarbide-derived carbons (SiOC-DCs) by adjusting the temperature from 1200 to $$2100^{\circ }\hbox {C}$$2100∘C, which will be characterized by means of $$\hbox {N}_{2}$$N2 adsorption, X-ray diffraction, Raman and transmission electron microscopy techniques, and studied their $$\hbox {CO}_{2}$$CO2 capture performances. The results show that the structure of SiOC-DCs varied regularly with treatment temperature. The porosity and crystallinity of the as-received sample are almost stable when the thermal-treatment temperature is $$<1500^{\circ }\hbox {C}$$<1500∘C. Subsequently, increasing the temperature (especially up to $$1800^{\circ }\hbox {C}$$1800∘C) will lead to an obvious improvement in the carbon crystallinity at the cost of pore structure breakage, which can be characterized by a quick decrease in the surface area and total pore volume of SiOC-DCs. Interestingly, the as-received SiOC-DC sample exhibits good $$\hbox {CO}_{2}$$CO2 capture performance at $$0^{\circ }\hbox {C}$$0∘C under ambient pressure, up to $$3.16\,\hbox {mmol}\,\hbox {g}^{-1}$$3.16mmolg-1. The thermal-treatment process under an Ar atmosphere in the range of 1200–1500$$^{\circ }\hbox {C}$$∘C could further help in increasing the $$\hbox {CO}_{2}$$CO2 adsorption ability by increasing the ultra-micropore ($$d < 0.6\,\hbox {nm}$$d<0.6nm) volume.

Keywords: treatment; hbox co2; circ hbox; co2 capture; thermal treatment; hbox

Journal Title: Bulletin of Materials Science
Year Published: 2019

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