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Abstract Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane… Click to show full abstract
Abstract Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as a precursor. Subsequent microscopic characterization of the thin film exhibits the presence of QD, which is theoretically corroborated from the exciton Bohr radius. The film shows interesting visible and near-infra-red photoluminescence at room temperature with enhanced lifetime. In addition to the lifetime, the quantum efficiency in the visible emission was also enhanced substantially than what was reported previously. Graphic abstract
Journal Title: Bulletin of Materials Science
Year Published: 2020
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