LAUSR

1T phase of transition metal dichalcogenides (TMDCs) formed by group 10 transition metals (e.g. Pt, Pd) have attracted increasing interests due to their novel properties and potential device applications. Synthesis of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to exfoliate. Here we report the growth of centimeter-scale PtTe, 1T-PtTe2 and 1T-PtSe2 films via direct deposition of Pt metals followed by tellurization or selenization. We find that by controlling the Te flux, a hitherto-unexplored PtTe phase can also be obtained, which can be further tuned into PtTe2 by high temperature annealing under Te flux. These films with different thickness can be grown on a wide range of substrates, including NaCl which can be further dissolved to obtain free-standing PtTe2 or PtSe2 films. Moreover, a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe2 with hole carriers, PtTe2 and PtTe films are metallic. Our work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film.