LAUSR

BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm−2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H2O oxidation.