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One of the basic components of smart power integrated circuits (SPICs) is the laterally diffused metal oxide semiconductor (LDMOS) transistors. In this paper, we propose Fin-LDMOS transistor based on the… Click to show full abstract
One of the basic components of smart power integrated circuits (SPICs) is the laterally diffused metal oxide semiconductor (LDMOS) transistors. In this paper, we propose Fin-LDMOS transistor based on the surface potential. In order to improve the accuracy, we have taken into account not only the fin-shape structure of the gate but also the mobility reduction and saturation velocity. The proposed method is evaluated considering a broad range of biases and physical parameters of the device. The comparison between modeling results and 3D simulations confirm the remarkable accuracy of our model.
Journal Title: Silicon
Year Published: 2019
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