LAUSR

The ultra-thin silicon solar devices perform a potential development direction to decrease material usage and thus lowering the expense. The ultra-thin silicon wafer and inverted pyramid structure texturing were completed by one-step Cu-catalyzed chemical etching (CCCE). In this paper, the influence of H 2 O 2 concentration, Cu (NO 3 ) 2 concentration, reaction temperature, and etching time on surface geometry, wafer thickness and light trapping were systematically investigated. The conclusion shows that introduce Cu-particles can significantly accelerate the dissolution of the silicon wafer, the thinning rate of 18 μm/min is more 40-times faster than that of conventional KOH thinning system. Inverted pyramid structure covered thin silicon wafer has ultra-low reflectivity of ~0.5% in the spectrum range of 300~1000 nm. The etching and inverted pyramid structure formation mechanism has finally discussed. The current work develops a new approach for thin silicon manufacturing. Which can be precisely managed by adjusting etching parameters that unlock potential applications in the microelectronics and solar cell market.