LAUSR

This article proposes a novel dual-material double-source T-shaped tunnel field-effect transistor (TFET) to suppress the ambipolar current conduction. The use of two sources in the proposed device doubles the tunneling junction area between the source and intrinsic regions, which consequently makes the TFET on-current double. To improve the switching ratio of the device, the gate work function engineering has been applied in the three-segmented gate structure of two different materials. The electrical characteristics of the investigated TFET with symmetric source-drain doping of 1 × 1020 cm−3 are studied using TCAD simulation. The simulation results demonstrate that the investigated device architecture with symmetric source-drain doping completely eliminates the ambipolar current when the applied bias voltage VGS is varied from 0 V to −1 V for VDS of 1 V. This TFET also exhibits a considerable improvement in the switching ratio.