LAUSR

Bulk Ge20Te80−xInx(x = 0, 6, 10 and 16) glasses are prepared by the conventional melt quenching technique. The crystallization mechanism is studied using differential scanning calorimetry performed at different heating rates under non-isothermal conditions. Also the electrical switching behavior of the given glass system has been investigated. The glass transition temperature (Tg), the peak crystallization temperature (Tp), the thermal stability (Tc–Tg), the average value of the activation energy for the glass transition (Eg), and the average value of the activation energy for crystallization (Ec), are calculated for the given glass system. The glasses studied are found to exhibit a current controlled negative-resistance behaviour and memory switching. Further, the switching voltage (Vt) is found to increase linearly with sample thickness in the range of 0.2–0.45 mm. It is observed that the variation of switching voltage (Vt) of Ge–Te–In glasses show a maximum value at an average coordination number  = 2.52 (at x = 6, onset of rigidity percolation), there after decreases and a minimum is seen in the switching voltage at an average coordination number  = 2.68 (at x = 14), which is likely to be the chemical threshold of the system. Beyond x = 14, switching voltage is found to increase again with composition.