The ground state binding energy of a hydrogenic donor impurity in a InGaAsP/InP ring-shaped quantum well wire is calculated via the plane wave basis method. It is shown that the… Click to show full abstract
The ground state binding energy of a hydrogenic donor impurity in a InGaAsP/InP ring-shaped quantum well wire is calculated via the plane wave basis method. It is shown that the donor binding energy is strongly dependent on the geometry, impurity position, axial electric field and transverse magnetic field. In particular, the impacts on the binding energy due to axial electric field and transverse magnetic field can mutually compensate.
Keywords:
field;
energy hydrogenic;
binding energy;
magnetic field;
impurity
Journal Title: Indian Journal of Physics
Year Published: 2018
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Journal Title: Indian Journal of Physics
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!