LAUSR

Zirconium exhibited pseudo-passive behavior in fluorinated nitric acid (11.5 M HNO3 + 0.05 M NaF) as the current density measured from the electrochemical studies was several orders higher than the value in fluoride free nitric acid. Impedance studies on zirconium sample exposed in 11.5 M HNO3 for 240 h confirmed the formation of the passive film with high polarization resistance value and the calculated thickness of the film based on the capacitance value was about ~4.5 nm. On the other hand, in fluorinated nitric acid, the charge transfer resistance value associated with the zirconium dissolution process was dominant when compared to that of the film formation. Results of X-ray photoelectron spectroscopic investigations upheld the presence of ZrOF2 and ZrF4 and indicated that the protective oxide layer growth was restricted by the presence of fluoride ions.