One trend for low dielectric materials is to reach low dielectric constant values at as low porosity as possible. In this work, a lamellar porous material was prepared by spin-coating… Click to show full abstract
One trend for low dielectric materials is to reach low dielectric constant values at as low porosity as possible. In this work, a lamellar porous material was prepared by spin-coating of poly(vinyl alcohol) (PVA)/manganese dioxide (MnO2) nanosheet composited film, followed by cross-linking of PVA and removing nanosheets. FTIR, XRD and TGA measurement results demonstrate that the templates were almost completely removed. SEM image shows that the etched PVA film has a lamellar porous structure. Dielectric test results indicate that at the porosity of only 17.5%, the dielectric constant of porous PVA is reduced to approximately half that of neat cross-linked PVA. The serial model shows a good consistence with experimental dielectric constant value. This explains well the high efficiency of lamellar porous structure in reducing dielectric constant.
               
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