LAUSR

In the last decade, an extensive progress on the research front has been seen in the field of high-performance Germanium on Silicon photodetectors. These detectors exhibit high responsivities for the near infrared region and are compatible with Silicon CMOS circuits. Due to these optoelectronic properties, these detectors have achieved a great surge in demand. Certain changes are required in the design to make the optical response better in terms of responsivity in the design. To make the responsivity better DBRs and metal contacts are included in the proposed design. In this research work, the excellent performance of the device with responsivity greater than 1 A/W at 1550 nm wavelengths is demonstrated.