LAUSR

A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage (VDS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that IDS,max and gm,max have weak temperature dependence with a power-law relation of ~T−0.5, owing to suppressed optical phonon scattering. The threshold voltage (Vth) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.