LAUSR

The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the chemical vapor deposition system as the growth substrate. The field-effect transistor based on Te grown on h-BN exhibits an ultrahigh hole mobility up to 1370 cm 2  V −1  s −1 at room temperature. The lack of stable p -type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p -type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p -type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm 2  V −1  s −1 at room temperature, that may lay the foundation for the future high-performance p -type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .