LAUSR

The quantum-dot light-emitting diodes (QLEDs) that emit near-infrared (NIR) light may be important optoelectronic synaptic devices for the realization of artificial neural networks with complete optoelectronic integration. To improve the performance of NIR QLEDs, we take advantage of their low-energy light emission to explore the use of poly(3-hexylthiophene) (P3HT) as the hole transport layer (HTL). P3HT has one of the highest hole mobilities among organic semiconductors and essentially does not absorb NIR light. The usage of P3HT as the HTL indeed significantly mitigates the imbalance of carrier injection in NIR QLEDs. With the additional incorporation of an interlayer of poly [9,9-bis(3′-(N, N-dimethylamino)propyl)-2,7-flourene]-alt-2,7-(9,9-dioctylfluorene)], P3HT obviously improves the performance of NIR QLEDs. As electroluminescent synaptic devices, these NIR QLEDs exhibit important synaptic functionalities such as short- and long-term plasticity, and may be employed for image recognition.摘要为了提高近红外发光二极管的性能, 我们利用聚3-己基噻吩(P3HT)空穴迁移率高和对近红外光没有吸收的特点, 将其作为器件的空穴传输层. 实验发现, P3HT改善了基于硅量子点的近红外发光二极管的空穴/电子传输不平衡的现象. 进一步地, 将聚[9,9-二(3′-(N, N-二甲胺基)丙基)-2,7-芴-交-2,7-(9,9-二辛基芴)](PFN)作为中间层修饰P3HT, 近红外硅量子点发光二极管的性能得到了更大改善, 其外量子效率和功率效率分别达到了3.4%和4.4%. 性能改善后的近红外硅量子点发光二极管可以用于模拟神经突触的可塑性, 如短时程可塑性和长时程可塑性.