LAUSR

Memristors are designed to mimic the brain’s integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable, which makes it difficult to realistically mimic the function of a biological synapse. This problem has become a main factor that hinders memristor applications. The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film. In this work, an Au/Hf 0.5 Zr 0.5 O 2 /p + -Si ferroelectric memristor is proposed, which is capable of achieving resistive switching characteristics. In particular, the proposed device realizes the stable characteristics of multilevel storage, which possesses the potential to be applied to multi-level storage. Through polarization, the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains. Additionally, a plurality of resistance states can be obtained in bidirectional continuous reversibility, which is similar to the changes in synaptic weights. Furthermore, the proposed memristor is able to successfully mimic biological synaptic functions such as long-term depression, long-term potentiation, paired-pulse facilitation, and spike-timing-dependent plasticity. Consequently, it constitutes a promising candidate for a breakthrough in the von Neumann framework. 忆阻器能够模拟人脑兼具存储和计算的功能, 从而突破 冯·诺依曼框架. 然而, 传统忆阻器内部导电细丝的形成和断裂是不 稳定的, 因此难以真实地模仿生物突触的功能, 这个问题已成为阻 碍忆阻器模拟神经突触应用的主要因素. 铁电忆阻器克服了传统 忆阻器的缺点, 因为它的电阻变化取决于铁电薄膜的极化翻转. 本 工作中, 我们提出了一种具有Au/Hf 0.5 Zr 0.5 O 2 /p + -Si结构的铁电忆阻 器, 能够实现电阻开关特性. 重要的是, 该器件能够实现多级存储的 稳定特性, 具有应用于多级存储的潜力. 同时通过调控铁电极化, 忆 阻器的电阻可由铁电畴的翻转来逐步调节. 同时, 我们可以获取具 有双向连续可逆性的多个电阻状态, 这类似于神经突触权重的变 化. 我们还成功模拟了生物学突触功能, 例如长期抑制, 长期促进, 双脉冲易化和尖峰时间依赖可塑性. 因此, 该器件是一种有希望突 破冯·诺依曼框架的候选者.