Treatments of fluoride (F), copper (Cu), and F–Cu from semiconductor-based silicon etching rinse baths by electrocoagulation (EC) using aluminum plate electrodes were investigated in this study. The effects of important… Click to show full abstract
Treatments of fluoride (F), copper (Cu), and F–Cu from semiconductor-based silicon etching rinse baths by electrocoagulation (EC) using aluminum plate electrodes were investigated in this study. The effects of important process variables such as current intensity, initial Ph, and initial concentration on the removal efficiencies of F and Cu were evaluated. Removal efficiencies for F and Cu in the single system were found at about 99% at optimum operating conditions. The highest removal efficiencies were achieved at pH 3 for F and between pH 3 and 5 for Cu containing synthetic wastewaters. Experiments were conducted with different F/Cu ratio when Cu concentration was kept constant, and F concentration was increased, the highest removal efficiency was observed at lower concentrations. EC study provided high removal efficiencies of F and Cu from semiconductor synthetic wastewater.
               
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