LAUSR

Abstract The memristor is a nano-scaled resistive switching device which is widely investigated in analog and digital applications. We report here our success in formulating a new window function as applicable to linear ion drift model. Accordingly, this paper identifies the demerits of other existing window functions and the requirement of a versatile window function to mimic the current-voltage characteristics of a physical memristor device. The proposed new window function overcomes the demerits of existing window functions such as boundary effect, boundary lock (with respect to frequency of operation), and the scalability. The main significance of proposed model is to facilitate the nonlinearity in linear ion drift memristor model that produces the pinched hysteresis loop (a signature of a memristor) for any typical applied voltage within the frequency range (0.05 ≤  f