Abstract Memory elements are suited for building self-organizing circuits. In contrast to memristive devices (nonlinear resistors with memory), memreactive devices (nonlinear capacitors or inductors with memory) are lossless and can… Click to show full abstract
Abstract Memory elements are suited for building self-organizing circuits. In contrast to memristive devices (nonlinear resistors with memory), memreactive devices (nonlinear capacitors or inductors with memory) are lossless and can be utilized in order to achieve more degrees of freedom in electrical circuits with respect to adaptively adjustable parameters. Fabrication of pure memreactive elements is hard yet and hence mathematical models are needed to make pioneering pre-investigations. Modeling of memreactive elements is closely related to the modeling of nonlinear reactive elements. Common memreactive models are based on a static definition. Thus, they are not passive in general. But losslessness of such devices is of great importance from a circuit theoretic point of view. We propose a modeling approach for lossless memreactive elements based on an energetic definition. In this context, a novel equivalent circuit of memory devices including memtransformer or memgyrator is introduced. A known meminductive model is utilized in simulations and comparisons between different definitions are shown in order to underly the necessity of an energetically consistent model.
               
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