Abstract The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of… Click to show full abstract
Abstract The optical behavior of thin multilayer systems can be analyzed by generalized ellipsometry and modeled using transfer matrices. Recently, a method has been implemented for modeling the interference of multiply-reflected partial waves in the spectroscopic study of bianisotropic crystals of moderate thickness using light sources of finite coherence. Here, a partial wave model is compared to reflection Mueller matrix measurements in order to simultaneously and accurately determine the thickness of distinct hetero-metallic thin films that flank a bianisotropic crystal whose thickness corresponds to the partial wave regime.
               
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