Photo from archive.org
Abstract High-index Bi 2 Se 3 (221) film has been grown on In 2 Se 3 -buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow… Click to show full abstract
Abstract High-index Bi 2 Se 3 (221) film has been grown on In 2 Se 3 -buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi 2 Se 3 (221) can be attributed to the layered structure of Bi 2 Se 3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi 2 Se 3 and In 2 Se 3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.
Journal Title: Applied Surface Science
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!