LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

Photo from archive.org

Abstract Metallic α-FeSi 2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy.… Click to show full abstract

Abstract Metallic α-FeSi 2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi 2 . With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β -FeSi 2 nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi 2 NWs begin to dissolve and become thinner until disappearing. The growth of the β -FeSi 2 nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e ., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β -FeSi 2 nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi 2 NWs.

Keywords: grown 110; stability iron; iron silicide; epitaxially grown; silicide nanowires; thermal stability

Journal Title: Applied Surface Science
Year Published: 2017

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.