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Abstract Pulse laser ablation experiments at semiconductor-grade silicon 〈111〉 and SAE 304 stainless steel were performed with femto- and nanosecond pulse durations. Threshold fluences in dependence of beam radius (1.6–100 μm)… Click to show full abstract
Abstract Pulse laser ablation experiments at semiconductor-grade silicon 〈111〉 and SAE 304 stainless steel were performed with femto- and nanosecond pulse durations. Threshold fluences in dependence of beam radius (1.6–100 μm) and density of low-density defects (LDDs) have been determined for both materials and pulse durations. The experimental findings are supported by a recent quantitative model describing the strong dependence of the modification/ablation/damage threshold fluence on beam radius and pulse number. The importance of LDDs in the ablation mechanism has been confirmed.
Journal Title: Applied Surface Science
Year Published: 2017
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