LAUSR

Abstract MoS 2 thin films are obtained by atomic layer deposition (ALD) in the temperature range of 120–150 °C using Mo(CO) 6 and dimethyl disulfide (DMDS) as precursors. A pressure tuned stop-flow ALD process facilitates the precursor adsorption and enables the deposition of MoS 2 on high porous three dimensional (3D) nanostructures. As a demonstration, a TiO 2 /MoS 2 core/shell inverse opal (TiO 2 /MoS 2 -IO) structure has been fabricated through ALD of TiO 2 and MoS 2 on a self-assembled multilayer polystyrene (PS) structure template. Due to the self-limiting surface reaction mechanism of ALD and the utilization of pressure tuned stop-flow ALD processes, the as fabricated TiO 2 /MoS 2 -IO structure has a high uniformity, reflected by FESEM and FIB-SEM characterization. A crystallized TiO 2 /MoS 2 -IO structure can be obtained through a post annealing process. As a 3D photonic crystal, the TiO 2 /MoS 2 -IO exhibits obvious stopband reflecting peaks, which can be adjusted through changing the opal diameters as well as the thickness of MoS 2 layer.