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Abstract In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al 2 O 3 film on the sensing area utilizing atomic layer… Click to show full abstract
Abstract In this study, we evaluated the pH sensitivity enhancement of AlGaN/GaN ion-sensitive field-effect transistor (ISFET) coated by Al 2 O 3 film on the sensing area utilizing atomic layer deposition (ALD). The presence of the Al 2 O 3 film leads to an obvious reduction of surface state density as well as leakage current in the solution, which is beneficial for improving the stability of the ISFET. Furthermore, the sensitivity of the ISFET was improved to 57.8 mV/pH, which is very close to the Nernstian limit at room temperature. The pH sensitivity enhancement can be explained by the higher density of sensing site as well as better surface hydrophilicity.
Journal Title: Applied Surface Science
Year Published: 2018
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