LAUSR

Abstract Single-crystal silicon carbide (4H-SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for fabrication of next-generation semiconductor devices. In this work, we report a hybrid polishing process combining thermal oxidation pretreatment and soft abrasive polishing to realize the damage-free and atomic-scale smooth finishing of the carbon face of 4H-SiC. By thermal oxidation pretreatment, the hardness of the carbon face has been reduced from 4.6 GPa to 1.7 GPa, which enables highly efficient polishing using CeO 2 slurry. For conventional CeO 2 slurry polishing without pretreatment, scratches still existed after a long polishing duration for 16 h. The probable scratch removal mechanism in CeO 2 slurry polishing has been proposed based on surface morphology changes during polishing. Whereas a scratch-free surface with well-ordered SiC atomic steps was obtained within a short polishing duration of only 3 h when polishing was conducted on a thermally oxidized surface. Our results demonstrate that hybrid polishing combining surface pretreatment and soft abrasive polishing is a promising approach to realize the damage-free and atomic-scale smooth finishing of the carbon face of 4H-SiC.