Abstract In the present work, V2O5 films were deposited by hydrothermal method at 230 °C for the deposition time of 4 h and 8 h and then annealed at 500 °C for 1 h and… Click to show full abstract
Abstract In the present work, V2O5 films were deposited by hydrothermal method at 230 °C for the deposition time of 4 h and 8 h and then annealed at 500 °C for 1 h and 2 h. X-ray diffraction pattern of the films deposited at 230 °C (4 h and 8 h) and annealed at 500 °C (1 h and 2 h) show orthorhombic system of V2O5. Further, scanning electron microscope images confirmed the growth of nanorods and microspheres formed with ring pattern containing nanorods. The average visible transmittance of the films deposited for a period of 4 h and annealed at 500 °C for 1 h and 2 h showed relatively high transmittance. The optical band gap of the deposited films is in the 2.34–2.46 eV range. The film prepared at 230 °C for 4 h and annealed at 500 °C for 1 h and 2 h showed relatively high carrier concentration and low resistivity and the film annealed at 500 °C for 1 h showed relatively high redox peak current density and diffusion coefficient when compared to the values of other films.
               
Click one of the above tabs to view related content.