Abstract Uniformity of memory switching parameters is a critical issue in the application of resistance random access memory (RRAM). Herein, we report a resistive memory device based on a NiO… Click to show full abstract
Abstract Uniformity of memory switching parameters is a critical issue in the application of resistance random access memory (RRAM). Herein, we report a resistive memory device based on a NiO layer pre-treated with an ionic liquid (IL) under positive voltage. Unlike a NiO-based device without IL pre-treatment, the IL-pre-treated device exhibited a forming-free characteristic, with uniform operation voltages and resistance as well as an enhanced Roff/Ron ratio during resistive switching. Further analysis indicated that performance improvement of the IL-pre-treated device can be attributed to the formation of oxygen vacancies in the film and the creation of Ni0-rich regions in the interface of NiO/Pt during IL pre-treatment. This finding offers a simple and practical pathway to develop high-performance filament-type memory devices.
Journal Title: Applied Surface Science
Year Published: 2019
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