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Abstract ZnO thin films have been prepared by atomic layer deposition for ultraviolet photodetection with metal-semiconductor-metal (MSM) structure. The innovation of rapid thermal annealing treatment can modulate the carrier concentration… Click to show full abstract
Abstract ZnO thin films have been prepared by atomic layer deposition for ultraviolet photodetection with metal-semiconductor-metal (MSM) structure. The innovation of rapid thermal annealing treatment can modulate the carrier concentration of the ZnO thin films, a lowest carrier concentration of 4.4 × 1014 cm−3 was obtained after annealing at 450 °C, resulting in the minimum dark current of 4.5 × 10−8 A at 5 V. Furthermore, these photodetectors demonstrated respectable responsivity of up to 27 A/W, and the detectivity was enhanced to a fairly high value of 8.5 × 1013 Hz1/2/W together with an extremely rapid response of
Journal Title: Applied Surface Science
Year Published: 2019
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