LAUSR

Abstract The fabrication of wafer-scale multilayers molybdenum disulfide (MoS2) induced by sulfurizing molybdenum (Mo) seed layer could compatible with traditional semiconductor process but the random growth orientations especially the vertical aligned structures lead to the unreliability for electronic devices thus hindered their wide application. Here, we utilize multi-step heating (MH) sulfurization method to regulate the sulfurization rate and diffusion rate of thermal sulfur vapor, thus realize the fabrication of MoS2 nanofilms with wafer-level uniformity and based on this, we integrate back-gate field-effect transistor (FET) arrays with an average hole mobility of 0.9cm2 V−1 s−1 and high device yield (~98%) which illustrate the reliable electrical-performance among the device arrays and the high quality of the as-fabricated MoS2 nanofilms. Therefore, we believe our efforts could pave the way for fabricating wafer-scale transition metal dichalcogenides (TMDCs) nanofilms with high uniformity and promoting their application for the integration of electronics/optoelectronics.