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Abstract In the study, an efficient process was proposed to prepare ALD MnOx films with bis(N,N′-di-tert-butylacetamidinato)manganese-(II) (Mn(tBu-MeAMD)2) and H2O. The process follows ideal self-limiting growth behaviors. The as-prepared smooth and… Click to show full abstract
Abstract In the study, an efficient process was proposed to prepare ALD MnOx films with bis(N,N′-di-tert-butylacetamidinato)manganese-(II) (Mn(tBu-MeAMD)2) and H2O. The process follows ideal self-limiting growth behaviors. The as-prepared smooth and pure MnOx films with a high growth rate of ~2.1 A/cycle were characterized by SEM, AFM, XRD and XPS methods. The MnOx films could conformally and uniformly grow into deep narrow trenches with high aspect ratios of 10:1, highlighting the application potential of the ALD process in complex 3D or porous structures-based nanoengineering.
Journal Title: Applied Surface Science
Year Published: 2019
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