LAUSR

Abstract The generation and transportation of spin-polarized current in silicon-based materials represent one of the most attractive topics in spintronics. Here, we present a strategy of designing magnetic semiconductors based on zigzag silicene covalently bonded with honeycomb III-V compound nanoribbons (i.e., ZSi/AlPNR and ZSi/GaAsNR). By tuning the edge states of the heteronanoribbons, high spin-filtering efficiencies can be achieved as a result of the opposite transverse electric fields induced by the III (Al, Ga) or V (P, As) atoms connected to the Si atoms at the interfaces. Importantly, the Si-III interfaced heteronanoribbons are found to be more suitable for spin-filtering applications. It is also demonstrated that the spin polarization and spin-filtering efficiency are robust and independent of the width of the heteronanoribbons.