LAUSR

Abstract It has attracted much research interest for the hot topic of photodetection application based on the two-dimensional (2D) heterostructures, owing to their higher light absorption and large separation efficiency of electron-hole pairs. However, the well-controlled growth with high-production and optoelectronic application of the heterostructures based on 2D materials still face great challenges. Photodetectors fabricated with the 2D SnS2/Si heterostructure have still not been well explored, although Si wafers have been proved to be an important substrate for novel optoelectronic application. Herein, the high-quality SnS2/Si heterostructure with large-size and uniform-thickness was prepared by using of a simple magnetron sputtering and post thermal annealing treatment in S atmosphere. The as-prepared SnS2/Si heterostructure exhibits the robust p-n contact and excellent diode rectification characteristic. The photodetector based on the heterostructure was then fabricated, which presents a reconfigurable switch behavior with a larger photocurrent up to 3.96 mA, a maximum detectivity of  ~1011 Jones, a ultrafast response speed of 16 μs, and a broad bandwidth of 11.2 kHz. The highly crystalline and on-stoichiometry SnS2 films become a promising form factor to build the high-performance photodetectors. The SnS2/Si heterostructure devices open up an exciting field for novel optical detection application and optoelectronic memory devices.