LAUSR

Abstract 2D MoS2 has the potential to be used in demanding products such as transistors with capability of overcoming short-channel effects of silicon, ultra-thin solar cells because of huge optical absorption in 2D form, memristors, capacitors, sensors etc. However, the commercial use of 2D MoS2 is hindered by the lack of synthesis methods which provide with high quality large scale deposition. Here we demonstrate the deposition of large area 2D 2H-MoS2 from bulk to bilayers on quartz substrates by industry compatible RF sputtering technique in a sulphur sufficient environment provided by evaporation of sulphur flakes by an in-situ effusion cell. Absorbance spectra of sputtered samples showed peaks corresponding to A, B, convoluted C and D and E excitons. Raman signature peaks of MoS2, A1g near 410 cm−1 and E12g around 380 cm−1 was found in all samples. A1g-E12g value decreased with decreasing deposition time, indicating the formation of thin MoS2 layers up to bilayer which was further supported by the evolution of photoluminescence spectra. AFM measurements exhibited a uniform surface morphology. XPS ascertained the purity of the samples. Thus we could prove that radio frequency magnetron sputtering could be used as an efficient method for large area deposition of 2D MoS2.