LAUSR

Abstract The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods are required to fabricate devices at the nanoscale. Here we developed a process that combines oxidation scanning probe lithography (o-SPL) and oxygen plasma to fabricate nanoribbon field-effect transistors and nano-constrictions on few-layer MoS2 and MoSe2. The oxygen plasma has a double role in this process. First, it forms a thin, uniform oxide layer on top of the flake surface to enable o-SPL nanopatterning with full control of shape and size. Second, the oxide layer thins down the flake. Both plasma-based and o-SPL oxides are soluble in deionized H2O, which enabled etching and the definition of electrically isolated nano-constrictions and nanoribbons. The accuracy and robustness of the process was applied to pattern sub-10 nm wide constrictions and nanoribbon transistors.